epitaxial device
英
美
【电】晶膜设备
双语例句
- An analytical breakdown model for thin epitaxial RESURF device with step doping profile drift is presented in this paper.
提出薄外延阶梯掺杂漂移区RESURF结构的耐压解析模型。 - A double graded doping drift dominated InP/ GaP photodiode is designed and the affections of the dislocations, which are resulted from the mismatch between the epitaxial layer and the substrate, to the device characterizations are studied.
设计了双梯度掺杂漂移机制InP/GaP光二极管，研究了由于晶体不匹配所造成的缺陷以及这些缺陷对器件性能的影响。 - Transition metal ( TM)-silicon contact systems have received special interest because of their importance in Schottky barrier formation, epitaxial growth, device reliability, refractoriness, etc.
过渡金属与硅的接触系统一直被人们所关注，是因为它们在界面处具有肖特基势垒的形成、过渡金属硅化物的外延生长、制作器件的稳定和耐高温等重要性。 - Self-Aligned Epitaxial CoSi_2 Contact on Source and Drain Regions for CMOS Device Technology
自对准外延CoSi2源漏接触CMOS器件技术 - Development of Vertical High-Vacuum MOCVD and Its Applications in GaN Epitaxial Growth and GaN-Based Device Fabrication
立式高真空MOCVD装置及GaN外延生长与器件制备 - Effects of SiH_4 Synchronous Epitaxial Growth Condition on the Electrical Parameters of SIT Device
SiH4同步外延对SIT电学参数的影响 - The method of epitaxial layer growth of the waveguide photodetector, the post-process processing steps and the device testing method have been described in detail.
详细介绍了波导型光探测器的外延片生长方法、后工艺加工步骤以及器件测试方法。 - Thirdly, the electric properties of epitaxial NiO which Deposited on hexagonal sapphire substrates with Pt metal electrodes were tested. The result shows that epitaxial NiO can be the good material for resistive random access memory device applications.
对在蓝宝石衬底上以Pt作为底电极制备的NiO薄膜结构进行了电学性能测试分析，结果表明该薄膜能够作为阻变存储器的材料。 - Focus on the structural and material parameters of the device, particularly the impact of the channel dimensions and the epitaxial layer parameters on electrical parameters of device.
重点分析了器件的结构参数、材料参数&特别是沟道尺寸和外延层参数等对器件电参数的影响。 - Therefore, high-quality GaAs epitaxial material is prerequisite for activation of the high sensitivity of the cathode, it is the basis to improve yield of image intensifier device.
优质的GaAs外延材料是实现激活高灵敏度阴极的先决条件，是提高像增强器成品率的关键所在。